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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220 package High DC current gain DARLINGTON Low collector saturation voltage Excellent safe operating area APPLICATIONS Electronic ignitor Relay and solenoid drivers Switching regulators Motor controls PINNING PIN 1 2 3 Base DESCRIPTION 2SD834 Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 250 Collector-base voltage Open emitter Collector-emitter voltage 200 Open base Collector-emitter voltage Emitter-base voltage Collector current-continuous Base current Collector power dissipation Junction temperature Storage temperature TC=25ae Open collector 180 10 4 0.3 25 150 -55~150 Collector;connected to mounting base Fig.1 simplified outline (TO-220) and symbol UNIT V V V A A W ae ae THERMAL CHARACTERISTICS SYMBOL R|E jc CHARACTERISTICS Thermal resistance junction to case MAX 5.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1A ; IB=0 IC=10mA ; IB=0 IC=0.1mA ; IE=0 IE=10mA ; IC=0 IC=2A;IB=2mA IC=2A;IB=2mA VCB=250V; IE=0 VEB=10V; IC=0 IC=2A ; VCE=2V 1500 MIN 180 200 250 10 TYP. 2SD834 SYMBOL VCEO(SUS) V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE MAX UNIT V V V V 1.5 2.0 0.1 10 V V mA mA Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Turn-on time Storage time IC=2A;IB1=-IB2=5mA; RL=10| PW=20|I s;DutyU 2% Fall time 1.7 |I |I |I s s s 15.0 18.0 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD834 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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